Halide Perovskites



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Halide Perovskite Precursors Dope PEDOT:PSS

par abergonzoni -

Collaborations : IMS, CEA-LETI
Reference : Adv. Electron. Mater. 2021, 2100394
DOI : https://doi.org/ 10.1002/aelm.202100394
Contacts : guillaume.wantz ims-bordeaux.fr

Abstract :
Halide perovskite semiconductors find use in a broad range of optoelectronic applications including photovoltaic solar cells and light-emitting diodes. In such devices the semiconductor is sandwiched in between interlayers for charge transport, extraction, or injection. When it comes to hole transport layers, the conducting polymer PEDOT:PSS has become an ubiquitous material. The halide perovskite thin film is commonly obtained by crystallization of precursors using solution processing on top of PEDOT:PSS. It is demonstrated here that such a widely spread technique is actually affecting the electrical properties of the underlying conducting polymer. The halide perovskite layer and precursors are drastically doping the PEDOT:PSS, its conductivity being increased by two orders of magnitude from 0.2 to 20 S cm−1. The depth of penetration of halide dopants is determined to be higher than 150 nm, superior to the usual thickness of PEDOT:PSS films. This phenomenon has important impact on diode leakage currents, on emission patterns of perovskite LEDs and on overestimated photocurrent density in perovskite solar cells embedding the PEDOT:PSS interlayer.

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